investigation of different treatments effect on germination and growth indices of cercis siliquastrum

cercis siliquastrum is compatible to soil types and has resistance to climate changes. therefore the study of its germination and growth condition can lead us to correct use for semi-arid lands in iran. in this research the effect of different treatment on cercis siliquastrum germination and growth indices was investigated and the most effective treatment was distinguished. thus, five frequencies and five treatments as control (full light), shadow (50% light), seed size, cultivation depth and sulfuric acid (level 0-5) was done on this species in water, soil and plant laboratory of agricultural science and natural resources university of sari. data was analyzed as factorial test and random method by analysis of variance and mean comparison in spss 16 and mstatc softwares. the independent and reciprocal effect of the parameters was obtained too. the result showed that the independent effect of light and the reciprocal effect of depth and acid were effect on collar width. but, resultant of all parameters such as light, depth, seed size and acid were effect on vegetative characteristics as leaf number and plant height.